Course Information
SemesterCourse Unit CodeCourse Unit TitleT+P+LCreditNumber of ECTS Credits
3EEM211Electronic Physics2+0+024

Course Details
Language of Instruction Turkish
Level of Course Unit Bachelor's Degree
Department / Program Electrical-Electronics Engineering
Mode of Delivery Face to Face
Type of Course Unit Compulsory
Objectives of the Course The aim of this course is to teach ideal and real operation of semiconductor circuit components and to show their differences. To achieve this diodes, MOSFETs and BJT would be introduced.
Course Content This course covers the subjects to understand physical structures of semiconductor devices and their relation in electronic circuits.
Course Methods and Techniques
Prerequisites and co-requisities None
Course Coordinator None
Name of Lecturers Prof.Dr. Murat Danışman
Assistants None
Work Placement(s) No

Recommended or Required Reading
Resources Microelectronic Circuits, Oxford University Press, NY, 2004.
Oral presentation

Course Category
Mathematics and Basic Sciences %60
Engineering %20
Science %20

Planned Learning Activities and Teaching Methods
Activities are given in detail in the section of "Assessment Methods and Criteria" and "Workload Calculation"

Assessment Methods and Criteria
In-Term Studies Quantity Percentage
Mid-terms 1 % 40
Final examination 1 % 60
Total
2
% 100

 
ECTS Allocated Based on Student Workload
Activities Quantity Duration Total Work Load
Course Duration 14 2 28
Hours for off-the-c.r.stud 14 4 56
Mid-terms 1 2 2
Final examination 1 2 2
Total Work Load   Number of ECTS Credits 3 88

Course Learning Outcomes: Upon the successful completion of this course, students will be able to:
NoLearning Outcomes
1 Understanding the physical prorperties and their working principles.
2 Understanding the ideal and real characteristics of semiconductor components.
3 Undertstanding the characteristics of diode, BJT and FET structures.


Weekly Detailed Course Contents
WeekTopicsStudy MaterialsMaterials
1 Physical principles of extrinsic and intrinsic semiconductors, operations of diodes, pn junction under open circuit conditions.
2 pn junction under reverse bias conditions, width and capacitance of depletion region.
3 i-v characteristics of forward and reverse biased pn junctions
4 Ideal and real diode characteristics
5 Forward diode modelling: exponential model, piecewise linear model, constant voltage drop model, ideal diyot model, small signal model.
6 Bipolar junction transistor (BJT), active mode of npn transistor
7 Mid-term Exams
8 Emitor, base and collector currents in npn nad pnp transistors
9 Emitor, base and collector currents in npn nad pnp transistors (continued)
10 Equavelent circuit of BJT, i-v characteristics of active mode BJTs
11 FET structures and their working principles
12 Working with small and increased VDS values
13 i-v characteristics and working regions in FET
14 Capacitve effects in gate region and influence of other physical effects.


Contribution of Learning Outcomes to Programme Outcomes
P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P99
C1 5 4 1 1 1 3 2 2 2 1 1
C2 5 5 1 1 1 3 2 2 2 1 1
C3 5 4 1 1 1 3 2 2 2 1 1

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